FCU850N80Z
Manufacturer:
On Semiconductor
Mfr.Part #:
FCU850N80Z
Datasheet:
Description:
MOSFETs TO-251-3 Through Hole N-Channel number of channels:1 75 W 800 V Continuous Drain Current (ID):6 A 22 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 75 W |
| Number of Channels | 1 |
| Input capacitance | 1.315 nF |
| Continuous Drain Current (ID) | 6 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 22 nC |
| Drain to Source Resistance | 850 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 800 V |
| Gate to Source Threshold Voltage | 2.5 V |
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